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US 2003/0164491 A1Published application
Diverse band gap energy level semiconductor device
AssigneeSanDisk Corporation
InventorThomas H. Lee
Life of this patent
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Abstract
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.
Claims56
A semiconductor device comprising:
- a first semiconductor layer having a first band gap energy level;
- a second semiconductor layer having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level;
- and
- an insulating layer disposed between the first and second layers that is capable of being selectively breached by passing a current between one of the first and second semiconductor layers.
1 more element
A memory element comprising:
- an insulating layer capable of being selectively breached by passing a current therethrough;
- and
- a first semiconductor layer in electrical communication with the insulating layer having a first band gap energy level, and
- a second semiconductor layer adjacent the first semiconductor layer and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level.
1 more element
A memory cell comprising:
- a rail-stack structure having:
- (a) a first rail-stack comprising:
- (1) a first conductor layer;
- and
- (2) at least one semiconductor layer having a first band gap energy level;
- (b) a second rail-stack in electrical communication with the first rail-stack and comprising:
- (1) a second conductor layer;
- (2) at least one semiconductor layer having a second band gap energy, wherein the second band gap energy level is different from the first band gap energy level;
- and
- (3) an insulating layer capable of being selectively breached by passing a current from one of the first and second rail-stacks.
7 more elements
A semiconductor structure comprising:
- a first semiconductor having a first band gap energy level;
- a second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level;
- a wordline input electrical communication with the first semiconductor;
- and
- a bitline output in electrical communication with the second semiconductor.
2 more elements
A semiconductor structure comprising:
- a first conductor and a second conductor;
- a steering element in circuit communication with the first conductor and comprising at least first and second semiconductor materials, the first semiconductor material having a first band gap energy level, the second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level;
- and
- a state change element in circuit communication with the steering element and the second conductor and comprising a selectable high impedance state and a selectable low impedance state.
1 more element
Dependencies are inferred from the claim text.