Method of forming an ITO layer on a heat-sensitive substrate
OwnerChi-Lin Chen, Tsung-Neng Liaoinventors
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Abstract
A method of forming an indium tin oxide (ITO) layer on a heat-sensitive substrate. An amorphous ITO layer is formed on the substrate by a sputtering process, wherein the temperature of the sputtering process is controlled at room temperature and, in situ, hydrogen gas with a flow rate of 1˜5 sccm is introduced in the sputtering process. Part of the amorphous ITO layer is removed by an oxalic acid solution to form an amorphous ITO pattern on the substrate. A heat treatment whose temperature is below 150° C. is performed to turn the amorphous ITO pattern into a crystalline ITO layer. Thus, a crystalline and flat ITO layer can be formed on the heat-sensitive substrate.
Claims16
A method of forming an indium tin oxide (ITO) layer, comprising the steps of:
- providing a substrate;
- performing a sputtering process to form an amorphous ITO layer on the substrate, wherein the temperature of the sputtering process is controlled at 10˜50° C. and, in situ, hydrogen gas is introduced in the sputtering process;
- using an etching solution to remove part of the amorphous ITO layer to form an amorphous ITO pattern on the substrate;
- and
- performing a heat treatment to turn the amorphous ITO pattern into a crystalline ITO layer, wherein the temperature of the heat treatment is controlled at 100˜150° C.
Dependencies are inferred from the claim text.