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OwnerTadashi Sawayama, Yasushi Fujioka +11inventors
InventorsTADASHI SAWAYAMA, YASUSHI FUJIOKA, MASAHIRO KANAI, SHOTARO OKABE, YUZO KOHDA, TADASHI HORI, KOICHIRO MORIYAMA, HIROYUKI OZAKI, YUKITO AOTA, ATSUSHI KOIKE, MITSUYUKI NIWA, YASUYOSHI TAKAI, HIDETOSHI TSUZUKI
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There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
An exhaust processing process of a processing apparatus for processing a substrate or a film, comprising the steps of:
A processing apparatus having a processing chamber for processing a substrate or a film therein and an exhaust means for exhausting a gas from the processing chamber, comprising a trap means provided between the processing chamber and the exhaust means, for causing a chemical reaction in a non-reacted gas and/or a by-product during processing, and a filament provided inside the trap means and comprised of a metal or an alloy comprising as a main component at least one of tungsten, molybdenum and rhenium.
A processing apparatus having a processing space for processing a substrate or a film therein and an exhaust means for exhausting a gas from the processing space, comprising means provided between the processing space and the exhaust means, for causing a chemical reaction in a non-reacted gas and/or a by-product during processing of the substrate or the film, wherein the means comprises a heat generating member comprising phosphorus (P) atoms.
A processing apparatus having a processing space for processing a substrate or a film therein and an exhaust means for exhausting a gas from the processing space, comprising between the processing space and the exhaust means, means for causing a chemical reaction in a non-reacted gas and/or a by-product during processing of the substrate or the film, wherein the means comprises a heat generating member comprising silicon (Si) atoms.
A processing apparatus having a processing chamber and an exhaust means for exhausting a gas from the processing chamber, comprising a chemical reaction causing means provided in an exhaust path connecting the processing chamber and the exhaust means, for causing a chemical reaction in a non-reacted gas and/or a by-product exhausted from the processing chamber, and a recovering means provided within a distance of 5 cm from the chemical reaction causing means, for recovering a chemical reaction product generated by the chemical reaction causing means.
A process of processing an exhaust gas exhausted from a processing space for processing a substrate or a film therein, which comprises exhausting the exhaust gas so as to be in contact with a heat generating member provided in an outlet of the processing space and controlled so as to have a current density within the range of 5 to 500 A/mm2, whereby a chemical reaction is caused in a non-reacted gas and/or a by-product contained in the exhaust gas.
A processing apparatus having a processing chamber and an exhaust means for exhausting a gas from the processing chamber, comprising, in an exhaust path connecting the processing chamber and the exhaust means, a region with a different mean velocity of the gas from that of the processing chamber, and a chemical reaction causing means provided in the region, for causing a chemical reaction in a non-reacted gas and/or a by-product exhausted from the processing chamber.
A plasma processing process which uses a plasma processing apparatus having a processing chamber for plasma-processing a substrate or a film and an exhaust means for exhausting a gas from the processing chamber, the process comprising using a chemical reaction causing means provided in an exhaust pipe connecting the processing chamber and the exhaust means, for causing a chemical reaction in a non-reacted gas and/or a by-product exhausted from the processing chamber, wherein the emission intensity of a plasma on the side of the exhaust means of the chemical reaction causing means is smaller than the emission intensity of a plasma on the side of the processing chamber.
A processing apparatus having a processing space and an exhaust means for exhausting a gas from the processing space, comprising a chemical reaction causing means provided in an exhaust path connecting the processing space and the exhaust means, for causing a chemical reaction in a non-reacted gas and/or a by-product during the processing, and a cooling means provided on the side of the exhaust means of the chemical reaction causing means.
A processing apparatus having a processing space and an exhaust means for exhausting a gas from the processing space, comprising a chemical reaction causing means provided in an exhaust path between the processing space in a chamber having the processing space and the exhaust means, for causing a chemical reaction in a non-reacted gas and/or a by-product during the processing, and a cooling means provided in at least a part of the exhaust path between the processing space and the exhaust means.
Dependencies are inferred from the claim text.