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US 2003/0164143 A1Published application
Batch-type remote plasma processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuyuki Toyoda, Yasuhiro Inokuchi, Motonari Takebayashi, Tadashi Kontani, Nobuo Ishimaru
Life of this patent
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Abstract
A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
Claims9
A plasma processing apparatus, comprising:
- a processing chamber in which a plurality of substrates are stacked and accommodated,
- a pair of electrodes extending in the stacking direction of said plurality of substrates, said electrodes being disposed at one side of said plurality of substrates in said processing chamber, and high frequency electricity being applied to said electrodes, and
- a gas supply member which supplies processing gas into a space between said pair of electrodes.
A plasma processing apparatus, comprising:
- a processing chamber in which a plurality of substrates are stacked and accommodated,
- a pair of electrodes which is disposed inside and outside of said processing chamber such as to be opposed to each other at one side of said plurality of substrates, and to which high frequency electricity is applied, and
- a gas supplying pipe which supplies processing gas into the processing chamber to a place which is away from the space between said pair of electrodes.
Dependencies are inferred from the claim text.