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US 2003/0164142 A1Published application
Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorChischio Koshimizu
Life of this patent
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Abstract
An electrical connection means 45 guides a DC voltage, which is generated in an ion sheath when a plasma is excited, to a first electrode 31 where a substrate W is placed. Hence, the DC voltage is applied to both the upper and lower surfaces of the substrate W, so the two surfaces of the substrate have the same potential. As a result, element breakdown, which occurs when a large potential difference occurs between the two surfaces of the substrate W, can be prevented.
Claims12
A plasma processing apparatus characterized by comprising
- a vessel where a predetermined vacuum degree is to be maintained,
- a plasma source which generates a plasma in said vessel,
- a first electrode which is arranged in said vessel and on which a substrate to be processed by the plasma is placed,
- a focus ring arranged on a periphery of said first electrode, and
- electrical connection means for guiding to said first electrode a DC voltage which is generated in an ion sheath when the plasma is generated
2 more elements
Dependencies are inferred from the claim text.