Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
AssigneeRicoh Company, Ltd.
InventorsSeiji Sarayama, Hirokazu Iwata, Masahiko Shimada, Hisanori Yamane, Masato Aoki
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Abstract
A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
Claims69
A group-III nitride crystal growth method, comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal;
- b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen;
- and
- c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b). 3
A group-III nitride crystal growth apparatus comprising:
- a reaction vessel in which a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal is prepared;
- and
- a crystal growth condition setting unit for setting a crystal growth condition for growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen,
- wherein said crystal growth condition setting unit sets the predetermined crystal growth condition according to a zone defined by a pressure and a temperature in the crystal growth process.
Dependencies are inferred from the claim text.