Electron beam shot linearity monitoring
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Chuan Wang, Tyng-Hao Hsu, Chin-Hsiang Lin
Life of this patent
Estimating the term…
Abstract
Electron beam (e-beam) shot linearity monitoring is disclosed. A pattern is written that has a predetermined size and a predetermined form in a predetermined position on a substrate, such as a semiconductor wafer, a reticle, or a photomask. The pattern writing fixes the e-beam shot size, as located along one or more critical dimensions of the pattern. The critical dimensions are then measured, where their variations reflect the e-beam shot size linearity. Thereafter, deficiencies in the e-beam shot size linearity can be compensated for, to allow for properly produced semiconductor patterns.
Claims20
A method for monitoring electron beam (e-beam) shot size linearity in semiconductor lithography comprising:
- writing a pattern having a predetermined size and a predetermined form in a predetermined position on a substrate to fix e-beam shot size located along one or more critical dimensions of the pattern;
- and
- measuring the one or more critical dimensions at least indirectly, where variations in the one or more critical dimensions reflect the e-beam shot size linearity.
A computer-readable medium having instructions stored thereon for execution by a processor for an electron beam (e-beam) lithography system to perform a method comprising:
- setting a dissection mode of the e-beam lithography system to a cflt setting;
- writing a pattern having a predetermined size and a predetermined form in a predetermined position on a substrate to fix e-beam shot size located along one or more critical dimensions of the pattern;
- and
- measuring the one or more critical dimensions at least indirectly, where variations in the one or more critical dimensions reflect the e-beam shot size linearity,
- where the pattern is made up of one or more of:
- one or more first basic patterns each of which is a critical dimension, one or more second basic patterns each of which is an e-beam shot having a fixed width and a variable height, one or more third basic patterns each of which is an e-beam shot having a fixed height and a variable width, and one or more fourth basic patterns each of which is an e-beam shot having a fixed size and shape.
A semiconductor device formed at least in part by electron beam (e-beam) lithography using an e-beam system, where the e-beam system has shot size linearity deficiencies corrected after evaluating the deficiencies by performing a method comprising:
- writing a pattern having a predetermined size and a predetermined form in a predetermined position on a substrate to fix e-beam shot size located along one or more critical dimensions of the pattern;
- and
- measuring the one or more critical dimensions at least indirectly, where variations in the one or more critical dimensions reflect the e-beam shot size linearity,
- where the pattern is made up of one or more of:
- one or more first basic patterns each of which is a critical dimension, one or more second basic patterns each of which is an e-beam shot having a fixed width and a variable height, one or more third basic patterns each of which is an e-beam shot having a fixed height and a variable width, and one or more fourth basic patterns each of which is an e-beam shot having a fixed size and shape.
Dependencies are inferred from the claim text.