Programming method for a multilevel memory cell

A multilevel memory device, comprising:

• a memory array including a plurality of multilevel memory cells organized into a plurality of data units each data unit including an active cell and an auxiliary cell having a level corresponding to a reference level;
• and
• programming means for writing a logic value in a selected one of the data units by setting a programming level of the selected data unit at one of said plurality of levels with respect to the reference level based on a symbol to be written in the data unit and on a previous programming level.

A programming method for a multilevel data unit able to store a plurality of bits in a plurality of levels, the data unit including a multilevel active cell and a multilevel auxiliary cell, the method comprising:

• determining a programming level of the active cell and a reference level of the auxiliary cell;
• and
• writing a logic value in the data unit by changing the programming level of the active cell to one of the plurality of levels or changing the reference level of the auxiliary cell to one of the plurality of levels such that a difference between the programming level of the active cell and the reference level of the auxiliary cell corresponds to the logic value, wherein the programming level of the active cell or the reference level of the auxiliary cell is changed by an amount that depends on the levels determined in the determining step.