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US 2003/0157815 A1Published application
Ammonia gas passivation on nitride encapsulated devices
AssigneeMicron Technology, Inc.
InventorsRonald A. Weimer, Fernando Gonzalez
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsRonald A. Weimer, Fernando Gonzalez
Estimating the term…
A method for passivating at least interfaces between structures formed from a conductive or semiconductive material and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurrence of unwanted voltage changes across the dielectric structures. The method includes exposing at least the interfaces to at least hydrogen species and forming an encapsulant layer that substantially contains the hydrogen species in the presence of the interfaces. The encapsulant layer substantially prevents the hydrogen species from escaping therethrough as processes that require temperatures of at least about 400° C. or of at least about 600° C. are conducted. Once such high temperature processes have been completed, portions of the encapsulant layer may be removed. Methods and systems for passivating semiconductor device structures are also disclosed, as are semiconductor device structures passivated according to the disclosed methods.
A method for passivating, in a semiconductor device structure, an interface between an insulative structure and an adjacent structure including at least one of a conductive material and a semiconductive material, comprising:
A method for fabricating a transistor structure of a semiconductor device structure, comprising:
A method for reducing a number of dangling silicon bonds at an interface between a structure formed from a material comprising silicon and an adjacent insulative structure, comprising:
A method for preventing unwanted threshold voltage changes across a dielectric structure of a semiconductor device structure, comprising:
A method for maintaining a concentration of hydrogen-passivated dangling silicon bonds at interfaces between structures comprising a material including silicon and adjacent dielectric structures of semiconductor device structures during processes that require temperatures of at least about 400° C. comprising forming an encapsulant layer positioned so as to substantially contain hydrogen species at said interface.
A method of passivating a silicon-silicon dioxide interface comprising:
A method of passivating an insulative structure of a semiconductor device under fabrication comprising:
Dependencies are inferred from the claim text.