Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using RF power

A method for forming a layer on a substrate in a chamber during an HDP-CVD process, said method comprising steps of:

• (a) forming a high-density plasma in the chamber;
• (b) flowing a process gas suitable for depositing a layer on a front side of the substrate into the chamber;
• and
• (c) heating a front side of the substrate during the HDP-CVD deposition process with the plasma, wherein the substrate is not thermally coupled to a substrate support structure.

A substrate-processing apparatus comprising:

• (a) a processing chamber with a wafer support structure;
• (b) a gas delivery system configured to deliver a process gas to said processing chamber;
• (c) a plasma system configured to form an inductively coupled plasma within said processing chamber;
• (d) a vacuum system configured to set and maintain a selected pressure within said processing chamber;
• (e) a controller configured to control said gas delivery system, said plasma system, and said vacuum system;
• and
• (f) a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the substrate processing apparatus, said computer-readable program comprising:
• (i) a first set of computer instructions for controlling said gas delivery system and said plasma system to flow a plasma gas into said chamber and to form a plasma at a first plasma power therefrom;
• (ii) a second set of computer instructions for controlling said gas delivery system to flow a source gas into said chamber;
• and
• (iii) a third set of computer instructions for controlling the plasma system to heat the substrate with the plasma and to not thermally couple the substrate to the wafer support structure.

A substrate-processing apparatus for filling trenches on a substrate with a dielectric material, the apparatus comprising:

• (a) a processing chamber with a substrate support structure;
• (b) a gas delivery system configured to deliver a process gas to said processing chamber;
• (c) an RF source plasma system configured to form a high-density plasma within said processing chamber;
• (d) an RF bias plasma system coupled to the substrate support structure;
• (e) a vacuum system configured to set and maintain a selected pressure within said processing chamber;
• (f) a controller configured to control said gas delivery system, said RF source plasma system, and said vacuum system;
• and
• (g) a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the substrate processing apparatus, said computer-readable program comprising:
• (i) a first set of computer instructions for controlling said gas delivery system and said RF source plasma system to flow a plasma gas into said chamber and to form a plasma therefrom;
• (ii) a second set of computer instructions for controlling said gas delivery system to flow a source gas into said chamber;
• and
• (iii) a third set of computer instructions for controlling said RF bias plasma system to provide a bias power density of at least about 0.057 W per square millimeter over a surface area of the substrate.

A substrate-processing apparatus for filling trenches on a substrate with a dielectric material, the apparatus comprising:

• (a) a processing chamber;
• (b) a gas delivery system configured to deliver a process gas to said processing chamber;
• (c) an RF source plasma system configured to form a high-density plasma within said processing chamber, the RF source plasma system including a first inductive coupling structure and a second inductive coupling structure and being configured to power the first inductive coupling structure differentially from the second inductive coupling structure;
• (d) a vacuum system configured to set and maintain a selected pressure within said processing chamber;
• (e) a controller configured to control said gas delivery system, said RF source plasma system, and said vacuum system;
• and
• (f) a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the substrate processing apparatus, said computer-readable program comprising:
• (i) a first set of computer instructions for controlling said gas delivery system and said plasma system to flow a plasma gas into said chamber and to form a plasma at a first plasma power therefrom;
• (ii) a second set of computer instructions for controlling said gas delivery system to flow a source gas into said chamber;
• and
• (iii) a fourth set of computer instructions for controlling said plasma system to provide a total RF power to the first inductive coupling structure and to the second inductive coupling structure wherein the first inductive coupling structure receives at least about 56% of the total RF power.