Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition , and semiconductor substrate

A method for producing a semiconductor device comprising the steps of:

• providing a substrate subjected to etching using a first resist pattern,
• removing said first resist pattern from said substrate using at least an organic removing solution;
• and
• forming a resist film on said substrate, from which said first resist pattern has been removed, using a chemical amplification type photoresist composition comprised of a base resin and a basic compound added to said base resin in a range of not less than 1 mmol to not more than 100 mmol to 100 g of the base resin, and
• exposing a predetermined area of said resist film to light to form a second resist pattern.

A method for producing a semiconductor device comprising the steps of:

• removing from a substrate, having a via-hole formed therein using a first resist pattern, said first resist pattern, using at least an organic removing solution;
• and
• forming a resist film on a substrate, having a via-hole formed therein, using a chemical amplification type photoresist composition comprised of a base resin and a basic compound added to said base resin in a range of not less than 1 mmol to not more than 100 mmol to 100 g of the base resin, and
• exposing a predetermined area of said resist film to light to form a second resist pattern used for forming a wiring groove.