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AssigneeFujitsu Limited
InventorsMiwa Kozawa, Koji Nozaki, Takahisa Namiki, Junichi Kon, Ei Yano
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A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
A resist pattern thickening material comprising;
A resist pattern thickening material comprising:
A resist pattern comprising a surface layer provided on a resist pattern to be thickened, with an etching rate (nm/s) ratio (resist pattern to be thickened/surface layer) of 1.1 or more under the same condition;
A process for forming a resist pattern comprising:
A semiconductor device comprising a pattern formed by a resist pattern, wherein the resist pattern comprises a surface layer on the resist pattern to be thickened, and the surface layer provided on the resist pattern to be thickened, with an etching rate (nm/s) ratio of 1.1 or more of (resist pattern to be thickened/surface layer) of the resist pattern to the surface layer under the same condition.
A process for manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.