Methods of forming semiconductor structures

A method of forming a semiconductor structure, comprising:

• forming a patterned line comprising a first layer and a second layer, the first layer comprising silicon and the second layer comprising a metal, the line having at least one sidewall edge comprising a first-layer-defined portion and a second-layer-defined portion;
• forming a third layer along said at least one sidewall edge, the third layer comprising silicon and being along both the first-layer-defined portion of the sidewall edge and the second-layer-defined portion of the sidewall edge;
• reacting silicon of the third layer with metal of the second layer to form a silicide along the second-layer-defined portion of the sidewall edge;
• and
• removing the silicon of the third layer to leave the silicon of the first layer, the metal of the second layer and the silicide.

A method of forming a semiconductor structure, comprising:

• forming a patterned line comprising a first layer and a second layer, the first layer comprising silicon and the second layer comprising a metal, the line having at least one sidewall edge comprising a first-layer-defined portion and a second-layer-defined portion;
• forming a third layer along said at least one sidewall edge, the third layer comprising silicon and being along both the first-layer-defined portion of the sidewall edge and the second-layer-defined portion of the sidewall edge;
• reacting silicon of the third layer with metal of the second layer to form a silicide along the second-layer-defined portion of the sidewall edge;
• providing the silicon of the third layer to be different than the silicon of the first layer;
• and
• selectively removing the silicon of the third layer relative to the silicon of the first layer.

A method of forming a semiconductor structure, comprising:

• forming a patterned line over a substrate, the patterned line comprising a first silicon layer and a metal layer over the first silicon layer;
• the line having at least one sidewall edge comprising regions of the first silicon layer and metal layer;
• forming a second silicon layer along said at least one sidewall edge, the second silicon layer being along the first silicon layer and metal layer regions of the sidewall edge;
• reacting silicon of the second silicon layer with metal of the metal layer region to form a silicide along the metal layer region of the sidewall edge;
• and
• oxidizing the silicon of the second silicon layer to convert the second silicon layer to a silicon dioxide layer.

A method of forming a semiconductor structure, comprising:

• forming a patterned line over a substrate, the patterned line comprising a doped silicon layer and a metal layer over the doped silicon layer;
• the line having at least one sidewall edge comprising regions of the doped silicon layer and metal layer;
• forming a second silicon layer along said at least one sidewall edge, the second silicon layer being along the doped silicon layer and metal layer regions of the sidewall edge and being less doped than the doped silicon layer;
• reacting silicon of the second silicon layer with metal of the metal layer region to form a silicide along the metal layer region of the sidewall edge;
• and
• selectively removing the silicon of the second silicon layer relative to the doped silicon of the doped silicon layer.

A method of forming a semiconductor structure, comprising:

• providing a semiconductive substrate having a layer of silicon dioxide thereover;
• forming a patterned line over the layer of silicon dioxide, the patterned line comprising a doped silicon layer and a metal layer over the doped silicon layer;
• the line having a pair of opposing sidewall edges comprising regions of the doped silicon layer and metal layer;
• forming a second silicon layer along the opposing sidewall edges and over the line, the second silicon layer being along the doped silicon layer and metal layer regions of the sidewall edges;
• anisotropically etching the second silicon layer to remove the second silicon layer from over the line and leave portions of the second silicon layer along the sidewall edges;
• and
• reacting silicon of the second silicon layer with metal of the metal layer region to form a silicide along the metal layer region of the sidewall edges.