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US 2003/0157788 A1Published application
Method of suppressing void formation in a metal line
AssigneeMicron Technology, Inc.
InventorJeffrey W. Honeycutt
Life of this patent
Estimating the term…
Abstract
An interconnect line that is enclosed within electrically conductive material is disclosed. The interconnect line, which is useful for electrically connecting devices in an integrated circuit, is defined by an aluminum layer having a bottom surface covered by a titanium layer, a top surface covered by a titanium layer, and opposing side surfaces covered by discrete titanium layers. The encapsulation of the aluminum layer within the titanium layers substantially precludes void formation within the aluminum layer. The interconnect line also may be upon a contact plug that is in electrical communication with an active area in an underlying semiconductor substrate.
Claims20
A method for forming a plurality of electrically conductive lines, the method comprising:
- forming a dielectric layer upon a semiconductor substrate having a plurality of electrically active regions therein;
- forming a plurality of recesses in the dielectric layer each terminating at a respective active region in the semiconductor substrate;
- forming a first refractory metal material upon the dielectric layer, within each said recess, and upon each said active regions;
- forming a conductive layer over the first refractory metal layer, said conductive layer having a top planar surface;
- forming an antireflective layer upon the conductive layer, wherein the antireflective layer has a plurality of recesses therein corresponding to the plurality of recesses in the dielectric layer;
- forming co-planar opposing pairs of side walls on each of the first refractory metal material, the conductive layer, and the antireflective layer, each said side wall beginning at a top surface of the dielectric layer and extending above the plurality of recesses, wherein the width between each said opposing pair of side walls is greater that the width of each said recess;
- forming a second refractory metal material on a top surface of the antireflective layer, and upon the co-planar opposing pairs of side walls on each of the first refractory metal material, the conductive layer, and the antireflective layer;
- and
- removing said second refractory metal material to:
- expose the top surface of the antireflective layer;
- and
- form therefrom a spacer upon each said co-planar opposing pair of side walls on each of the first refractory metal material, the conductive layer, and the antireflective layer.
9 more elements
A method for forming an electrically conductive line on a semiconductor substrate, the method comprising:
- forming a dielectric layer upon a top surface of a semiconductor substrate;
- forming a trench in the dielectric layer that extends longitudinally parallel to and terminates at the top surface of the semiconductor substrate;
- and
- forming an aluminum layer enclosed within a refractory metal material within the trench, the refractory metal material being upon the top surface of the semiconductor substrate.
1 more element
A method for forming an electrically conductive line on a semiconductor substrate, the method comprising:
- forming a first refractory metal layer over the semiconductor substrate;
- forming an electrically conductive layer over said first refractory metal layer;
- forming a second refractory metal layer over said electrically conductive layer;
- removing portions of said first refractory metal layer, electrically conductive layer, and second refractory metal layer to form an interconnect line composed of remaining portions of said first refractory metal layer, said electrically conductive layer, and said second refractory metal layer, said interconnect line having opposing side surfaces where said electrically conductive layer is exposed;
- forming a third refractory metal layer on the semiconductor substrate to cover said interconnect line, a portion of said third refractory metal layer being upon said side surfaces of said interconnect line;
- and
- removing said third refractory metal layer, except for said portion of said third refractory metal layer upon said side surfaces of said interconnect line.
4 more elements
A method for forming an electrically conductive line on a semiconductor substrate, the method comprising:
- forming a first metal layer over the semiconductor substrate;
- forming an electrically conductive layer over said first metal layer, said electrically conductive layer having a top surface;
- removing portions of said first metal layer and electrically conductive layer to form an interconnect line composed of remaining portions of said first metal layer and said electrically conductive layer, said interconnect line having opposing side surfaces where said electrically conductive layer is exposed;
- forming a second refractory metal layer on the semiconductor substrate to cover said interconnect line, a portion of said refractory metal layer being upon said top surface of said electrically conductive layer and side surfaces of said interconnect line;
- and
- removing said second refractory metal layer except for said portion upon said top surface of said electrically conductive layer and said side surfaces of said interconnect line.
3 more elements
A method for forming an electrically conductive line, the method comprising:
- forming an insulator layer upon a semiconductor substrate;
- forming a recess within the insulator layer, the recess exposing a surface upon the semiconductor substrate;
- forming within the recess a refractory metal line, said refractory metal line being in contact with the exposed surface upon the semiconductor substrate;
- forming a conductive bottom metal layer upon the insulator layer and the refractory metal line;
- forming an electrically conductive layer upon said conductive bottom metal layer;
- forming a top metal layer upon said electrically conductive layer;
- selectively removing said conductive bottom metal layer, said electrically conductive layer, and said top metal layer to form a remaining portion of each, wherein the remaining portions of said conductive bottom metal layer, said electrically conductive layer, and said top metal layer form a conductor line projecting above and adjacent to an exposed surface on said insulator layer, said conductor line having a top surface and opposing lateral sides;
- and
- forming spacers upon the opposing lateral sides of said conductor line.
6 more elements
A method for forming an electrically conductive line, the method comprising:
- forming an insulator layer upon a semiconductor substrate;
- forming a recess within the insulator layer, the recess exposing a surface upon the semiconductor substrate;
- forming within the recess a refractory metal line, said refractory metal line being in contact with the exposed surface upon the semiconductor substrate;
- forming a conductive bottom metal layer upon the insulator layer and the refractory metal line;
- forming an electrically conductive layer upon said conductive bottom metal layer;
- forming an antireflective coating layer upon the electrically conductive layer;
- patterning said antireflective coating layer in a photolithographic process to form a pattern therein;
- removing portions of said conductive bottom metal layer and said electrically conductive layer through the pattern in said antireflective coating layer to form an interconnect line composed of remaining portions of said conductive bottom metal layer and said electrically conductive layer, said interconnect line having opposing side surfaces where said conductive bottom metal layer and said electrically conductive layer are exposed, said interconnect line having a top surface;
- and
- forming a spacer material upon the opposing side surfaces of said interconnect line.
7 more elements
A method for forming an electrically conductive line, the method comprising:
- forming an insulator layer upon a semiconductor substrate, the insulator layer having a top surface;
- forming a recess within the insulator layer, the recess exposing a surface upon the semiconductor substrate;
- forming within the recess a conductive bottom metal layer that is upon the exposed surface upon the semiconductor substrate and is also upon the top surface of the insulator layer;
- forming an electrically conductive layer with said recess and upon said conductive bottom metal layer;
- forming a top metal layer upon said electrically conductive layer;
- selectively removing said conductive bottom metal layer, said electrically conductive layer, and said top metal layer to form a remaining portion of each, wherein the remaining portion of said conductive bottom layer is in contact with the exposed surface upon the semiconductor substrate, and wherein the remaining portions of said conductive bottom metal layer, said electrically conductive layer, and said top metal layer form a conductor line projecting above and adjacent to an exposed surface on said insulator layer, said conductor line having a top surface and opposing lateral sides;
- and
- forming spacers upon the opposing lateral sides of said conductor line.
5 more elements
Dependencies are inferred from the claim text.