US 2003/0157777 A1 · Method of fabricating self-aligned silicon carbide semiconductor devices

Abstract

Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.

Claims26

Dependent claims

A method of forming a self-aligned Silicon Carbide (SiC) device, the method comprising the steps of:

providing a multi-layer laminate including at least a first and second layer of SiC material;
defining at least one mesa structure in one of the first and second layers;
and
utilizing the mesa structure and at least one planarization step to construct the device in a self-aligned manner.

1 more element

Dependencies are inferred from the claim text.

Method of fabricating self-aligned silicon carbide semiconductor devices

Life of this patent

Method of fabricating self-aligned silicon carbide semiconductor devices

Life of this patent

Abstract

Claims26