Semiconductor device having a dielectric layer with a uniform nitrogen profile
OwnerJerry Hu, Paul E. Nicollian +4inventors
InventorsJerry Hu, Paul E. Nicollian, Kwame N. Eason, Rajesh Khamankar, Mark S. Rodder, Sunil Hattangady
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Abstract
A method for manufacturing a semiconductor device includes forming a first layer adjacent a semiconductor substrate. The first layer may comprise oxygen. The first layer may be subjected to a material comprising nitrogen to form a second layer. The second layer may be oxidized to form a dielectric layer which may have a relatively uniform nitrogen profile. Rapid thermal oxidation may be used to form the dielectric layer. The dielectric layer may have a physical thickness greater than a physical thickness of the second layer.
Claims28
A method of manufacturing a semiconductor device, comprising:
- forming a first layer adjacent a semiconductor substrate, the first layer having a first physical thickness;
- subjecting the first layer to a material to form a second layer having a second physical thickness, wherein the material comprises nitrogen;
- and
- oxidizing the second layer to form a dielectric layer having a third physical thickness, wherein the dielectric layer has a relatively uniform nitrogen profile.
A semiconductor device, comprising:
- a dielectric layer having a relatively uniform nitrogen profile;
- and
- wherein the dielectric layer is formed by subjecting a first layer of a semiconductor substrate to a nitrogen plasma to form a second layer and oxidizing the second layer.
A method of manufacturing a semiconductor device, comprising:
- forming a first layer adjacent a semiconductor substrate, the first layer comprising oxygen and having a physical thickness of generally between nine and twenty-four angstroms;
- subjecting the first layer to a plasma to form a dielectric layer, wherein the plasma comprises nitrogen;
- and
- the dielectric layer having a relatively uniform nitrogen profile.
Dependencies are inferred from the claim text.