US 2003/0157772 A1 · Method of forming layers of oxide on a surface of a substrate

Abstract

A method of forming oxide layers of different thickness on a substrate is disclosed, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a reduced number of masking steps compared to the conventional processing, wherein the thickness difference can be maintained within a range of some tenths of a nanometer. The method substantially eliminates any high temperature oxidations and is also compatible with most chemical vapor deposition techniques used for gate dielectric deposition in sophisticated semiconductor devices.

Claims96

Dependent claims

A method of forming at least one first layer of nitrided oxide of a first, predefined thickness on at least one first portion of the surface of a substrate and at least one second layer of nitrided oxide of a second, predefined, different thickness on at least one second portion of the surface of the substrate, comprising:

forming at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to the respective, first predefined thickness;
and
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to the respective, second, predefined, different thickness.

1 more element

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to the respective, first predefined thickness;
and
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to the respective, second, predefined, different thickness.

2 more elements

A method of forming at least one first layer of oxide of a first, predefined thickness on at least one first portion of the surface of a substrate and at least one second layer of oxide of a second, predefined, different thickness on at least one second portion of the surface of the substrate, comprising:

forming at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
and
adding a layer of oxide to the at least two layers of nitrided oxide so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
and
thermal growing a layer of oxide on the at least two layers of nitrided oxide so as to obtain at least two layers of oxide of predefined, different thickness.

3 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
thermal growing a layer of oxide on the at least two layers of nitrided oxide so as to obtain at least two layers of oxide of predefined, different thickness.

1 more element

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
depositing a layer of oxide on the at least two layers of nitrided oxide with a chemical vapor deposition process so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
depositing a layer of oxide on the at least two layers of nitrided oxide with a chemical vapor deposition process so as to obtain at least two layers of oxide of predefined, different thickness.

1 more element

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
thermal growing a layer of oxide on the at least one first and one second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
and
thermal growing a layer of oxide on the at least one first and one second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
and
depositing a layer of oxide on the at least one first and second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

3 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
and
depositing a layer of oxide on the at least one first and second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/208,308Filed 30 Jul 2002

Priority

DE 102 07 122.520 Feb 2002

Published

21 Aug 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation

Abstract

Claims96

Dependent claims

forming at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to the respective, first predefined thickness;
and
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to the respective, second, predefined, different thickness.

1 more element

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to the respective, first predefined thickness;
and
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to the respective, second, predefined, different thickness.

2 more elements

forming at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
and
adding a layer of oxide to the at least two layers of nitrided oxide so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
and
thermal growing a layer of oxide on the at least two layers of nitrided oxide so as to obtain at least two layers of oxide of predefined, different thickness.

3 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
thermal growing a layer of oxide on the at least two layers of nitrided oxide so as to obtain at least two layers of oxide of predefined, different thickness.

1 more element

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
depositing a layer of oxide on the at least two layers of nitrided oxide with a chemical vapor deposition process so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
thinning the initial layer of nitrided oxide on the at least one first portion of the surface of the substrate to a first, intermediate thickness lower than the respective, first predefined thickness;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate to a second, intermediate thickness different from the first intermediate thickness and lower than the respective, second predefined thickness;
depositing a layer of oxide on the at least two layers of nitrided oxide with a chemical vapor deposition process so as to obtain at least two layers of oxide of predefined, different thickness.

1 more element

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
thermal growing a layer of oxide on the at least one first and one second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
and
thermal growing a layer of oxide on the at least one first and one second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

thermal growing at least one initial layer of oxide of an initial thickness exceeding both the first and second, predefined thickness on at least one first and one second portion of the surface of the substrate;
annealing the initial layer of oxide in a nitrogen-containing atmosphere so as to form an initial layer of nitrided oxide on the at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
and
depositing a layer of oxide on the at least one first and second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

3 more elements

thermal growing at least one layer of oxide in a nitrogen-containing atmosphere so as to form at least one initial layer of nitrided oxide of an initial thickness exceeding both the first and second predefined thickness on at least one first and one second portion of the surface of the substrate;
removing the layer of nitrided oxide from the at least one first portion of the surface of the substrate targeted for the thin layer of oxide;
thinning the initial layer of nitrided oxide on the at least one second portion of the surface of the substrate targeted for the thick layer of oxide to a thickness lower than the respective, predefined thickness;
and
depositing a layer of oxide on the at least one first and second portion of the surface of the substrate so as to obtain at least two layers of oxide of predefined, different thickness.

2 more elements

Dependencies are inferred from the claim text.

Method of forming layers of oxide on a surface of a substrate

Life of this patent

Abstract

Claims96

Method of forming layers of oxide on a surface of a substrate

Life of this patent

Abstract

Claims96