Method of manufacturing semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsShinichi Nakabayashi, Hidekazu Okuda, Kosaku Tachikawa
Life of this patent
Estimating the term…
Abstract
Disclosed is a method to achieve the planarization of a BPSG film and reduction of micro-scratches on a BPSG film by the CMP method. A BPSG film is deposited over a main surface of a substrate on which MISFETs have been formed, and then, a surface of the BPSG film is planarized by the CMP method. Thereafter, a thermal treatment is performed to the substrate to reflow the BPSG film, thereby removing the micro-scratches on the surface of the BPSG film caused by the polishing. At this time, the amount of polishing of the surface of the BPSG film is controlled within a range of 90 to 300 nm, preferably 100 to 250 nm, and more preferably 120 to 200 nm.
Claims16
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a first insulating film mainly made of BPSG over a main surface of a semiconductor substrate;
- (b) performing a polishing process of the surface of the first insulating film by the use of the CMP method under the condition that the amount of polishing is within a range of 90 to 300 nm;
- and
- (c) after the step (b), performing a thermal treatment to the semiconductor substrate to reflow the first insulating film.
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a plurality of MISFETs over a main surface of a semiconductor substrate;
- (b) after the step (a), forming a first insulating film mainly made of BPSG over the main surface of the semiconductor substrate;
- (c) performing a polishing process to the surface of the first insulating film by the use of the CMP method under the condition that the amount of polishing is within a range of 90 nm to 300 nm;
- and
- (d) after the step (c), performing a thermal treatment to the semiconductor substrate to reflow the first insulating film.
Dependencies are inferred from the claim text.