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AssigneeLSI Logic Corporation
InventorsDerryl D.J. Allman, Nabil Mansour, Ponce Saopraseuth
Estimating the term…
A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.
A method of fabricating a capacitor dielectric material in a capacitor, comprising the steps of:
A method of fabricating a capacitor dielectric material, comprising the steps of:
A method of fabricating a capacitor dielectric material, comprising the steps of:
A method of fabricating a capacitor dielectric material, comprising the steps of:
A capacitor having plates and a dielectric material comprising silicon, nitrogen and hydrogen formed between the plates, the dielectric material having a stoichiometric ratio of silicon to nitrogen of approximately 1.0 or less.
Dependencies are inferred from the claim text.