Deposition of tungsten films for dynamic random access memory (DRAM) applications
AssigneeApplied Materials, Inc.
InventorsMing Xi, Soonil Hong, Hyungsuk A. Yoon, Michael X. Yang, Hui Zhang
Life of this patent
Estimating the term…
Abstract
A method of tungsten deposition for dynamic random access memory (DRAM) applications is described. The DRAM devices typically include two electrodes separated by a dielectric material. At least one of the two electrodes comprises a tungsten-based material. The tungsten-based material may be formed using a cyclical deposition technique. Using the cyclical deposition technique, the tungsten-based material is formed by alternately adsorbing a tungsten-containing precursor and a reducing gas on a structure.
Claims53
A method of forming an electrode for a capacitor structure, comprising:
- providing a substrate structure, wherein the substrate structure comprises an insulating material layer formed over a first electrode;
- depositing a tungsten-based layer on the insulating material layer using a cyclical deposition process, wherein the tungsten-based layer comprises a second electrode.
A method of forming a capacitor structure, comprising:
- forming a first electrode on a substrate;
- forming an insulating material layer over the first electrode;
- and
- depositing a tungsten-based layer on the insulating material layer using a cyclical deposition process, wherein the tungsten-based layer comprises a second electrode.
A method of forming an electrode, comprising:
- providing a substrate to a process chamber;
- and
- depositing a tungsten-based layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to the process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a tungsten-containing precursor and a reducing gas.
A method of forming an electrode for a capacitor structure, comprising:
- providing a substrate structure to a process chamber, wherein the substrate structure comprises an insulating material layer formed over a first electrode;
- and
- depositing a tungsten-based layer on the substrate using a cyclical deposition process comprising a plurality of cycles, wherein each cycle comprises establishing a flow of an inert gas to the process chamber and modulating the flow of the inert gas with an alternating period of exposure to one of either a tungsten-containing precursor and a reducing gas, and wherein the tungsten-based layer comprises a second electrode.
Dependencies are inferred from the claim text.