Method for forming semiconductor substrate with convex shaped active region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin Yi Lee, Yin-Pin Wang
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Abstract
Within a method for fabricating a semiconductor substrate while employing formed thereover a mask layer there is first employed the mask layer as an etch mask layer for forming a pair of isolation trenches within the semiconductor substrate and then laterally etched the mask layer prior to employing the laterally etched mask layer as an oxidation mask layer. By laterally etching the mask layer, there is formed within the semiconductor substrate a continuously curved convex elevated region as an active region of the semiconductor substrate.
Claims15
A method for fabricating a semiconductor substrate comprising:
- providing a semiconductor substrate;
- forming over the semiconductor substrate a mask layer;
- etching the semiconductor substrate while employing the mask layer as an etch mask layer to form an elevated plateau within an etched semiconductor substrate which separates a pair of isolation trenches within the etched semiconductor substrate;
- laterally etching the mask layer to form a laterally etched mask layer formed over the elevated plateau and laterally recessed from the pair of isolation trenches;
- thermally oxidizing the etched semiconductor substrate while employing the laterally etched mask layer as an oxidation mask layer to form from the elevated plateau a continuously curved convex elevated region formed within a thermally oxidized etched semiconductor substrate.
Dependencies are inferred from the claim text.