Semiconductor device and fabrication method thereof

A method of fabricating a semiconductor device comprising the steps of:

• forming a first insulating film containing hydrogen over a semiconductor layer formed over a substrate;
• and
• forming a second insulating film on said first insulating film;
• and
• performing a heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first insulating film containing hydrogen over a semiconductor layer formed over a substrate;
• performing a first heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation;
• forming a second insulating film on said first insulating film;
• and
• performing a second heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second insulating film.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first insulating film over a semiconductor layer formed over a substrate;
• performing a heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said first insulating film;
• forming a third insulating film containing hydrogen on said first insulating film;
• and
• performing a heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film after forming said third insulating film.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first insulating film containing hydrogen over a semiconductor layer formed over a substrate;
• forming a second insulating film on said first insulating film;
• performing a heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second insulating film;
• forming a third insulating film containing hydrogen on said second insulating film;
• and
• performing a heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first insulating film over a semiconductor layer formed over a substrate;
• performing a first heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said first insulating film;
• forming a second insulating film on said first insulating film;
• performing a second heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second insulating film;
• forming a third insulating film containing hydrogen on said second insulating film;
• and
• performing a third heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film

A method of fabricating a semiconductor device comprising the steps of:

• forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over a semiconductor layer formed over a substrate;
• forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film;
• and
• performing a heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second silicon nitride oxide film

A method of fabricating a semiconductor device comprising the steps of:

• forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over a semiconductor layer formed over a substrate;
• performing a first heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said first silicon nitride oxide film;
• forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film;
• and
• performing a second heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second silicon nitride oxide film.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over a semiconductor layer formed over a substrate;
• performing a first heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said first silicon nitride oxide film;
• forming a hydrogen-containing insulating film on said first silicon nitride oxide film;
• and
• performing a second heat-treatment in an atmosphere containing hydrogen or nitrogen after said forming said hydrogen-containing insulating film.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over a semiconductor layer formed over a substrate;
• forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film;
• performing a first heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second silicon nitride oxide film;
• forming a hydrogen-containing insulating film on said second silicon nitride oxide film;
• and
• performing a second heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said hydrogen-containing insulating film.

A method of fabricating a semiconductor device comprising the steps of:

• forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over a semiconductor layer formed over a substrate;
• performing a first heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said first silicon nitride oxide film;
• forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film;
• performing a second heat-treatment in a hydrogen atmosphere or in an atmosphere containing hydrogen formed by plasma generation after forming said second insulating film;
• forming a hydrogen-containing insulating film on said second silicon nitride oxide film;
• and
• performing a third heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said hydrogen-containing insulating film.

A semiconductor device comprising:

• a semiconductor layer formed over a substrate:
• a first insulating film formed over a semiconductor layer, said first insulating film comprising a silicon nitride oxide film having a hydrogen concentration of at least 1 atomic % to less than 30 atomic % and a nitrogen concentration of at least 10 atomic % to less than 25 atomic %;
• and
• a second insulating film formed on said first insulating film, said second insulating film comprising a silicon nitride oxide film having a hydrogen concentration of at least 1 atomic % to less than 30 atomic % and a nitrogen concentration of at least 10 atomic % to less than 25 atomic %, or a silicon nitride film having a hydrogen concentration of at least 1 atomic % to less than 30 atomic %.

A semiconductor device comprising:

• a semiconductor layer formed over a substrate;
• a first insulating film formed over said semiconductor layer, said first insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen;
• a second insulating film comprising a silicon nitride oxide film having a nitrogen concentration of less than 10 atomic %, said second insulating film formed on said first insulating film;
• and
• a third insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen or a silicon nitride film containing at least 1 atomic % to less than 30 atomic % of hydrogen, said third insulating film formed on said second insulating film.

A semiconductor device comprising:

• a semiconductor layer formed over a substrate;
• a gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween;
• a first insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen, said first insulating film being in contact with said gate electrode and said gate insulating film;
• and
• a second insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen or a silicon nitride film containing at least 1 atomic % to less than 30 atomic % of hydrogen, said second insulating film being in contact with said first insulating film.

A semiconductor device comprising:

• a semiconductor layer formed over a substrate;
• a gate electrode formed adjacent to said semiconductor layer with a gate insulating film interposed therebetween;
• a first insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and at least 10 atomic % to less than 25 atomic % of nitrogen, said first insulating being in contact with said gate electrode and said gate insulating film;
• a second insulating film comprising a silicon nitride oxide film containing a nitrogen concentration of less than 10 atomic %, said second insulating film formed on said first insulating film;
• a third insulating film comprising a silicon nitride oxide film containing at least 1 atomic % to less than 30 atomic % of hydrogen and containing at least 10 atomic % to less than 25 atomic % of nitrogen or a silicon nitride film containing at least 1 atomic % to less than 30 atomic % of hydrogen, said third insulating film formed on said second insulating film.