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US 2003/0157735 A1Published application
Thermal characterization compensation
AssigneeLSI Logic Corporation
InventorCharles E. May
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AssigneeLSI Logic Corporation
InventorCharles E. May
Estimating the term…
A method of standardizing a fabrication process for an integrated circuit. The fabrication process includes a preceding thermal energy sensitive process and at least one set of selectable seceding thermal energy delivery processes. Each one of the set of selectable seceding thermal energy delivery processes delivers different amounts of thermal energy to the integrated circuit, where one of the different amounts of thermal energy is a greatest amount of thermal energy. An integrated circuit structure is formed using the preceding thermal energy sensitive process. The preceding thermal energy sensitive process is characterized based at least in part upon the greatest amount of thermal energy delivered to the integrated circuit by one of the set of selectable seceding thermal energy delivery processes. In the case where one of the set of selectable seceding thermal energy delivery processes is selected that delivers an actual amount of thermal energy to the integrated circuit that is less than the greatest amount of thermal energy, an additional amount of thermal energy is delivered to the integrated circuit. The additional amount of thermal energy is equal to a difference between the actual amount of thermal energy and the greatest amount of thermal energy. In this manner, the preceding thermal energy sensitive process preferably requires only a single configuration that takes into account the amount of thermal energy that will be subsequently delivered to the integrated circuit. Then as subsequent processes are selected and accomplished, if they do not deliver the greatest amount of thermal energy as anticipated by the preceding thermal energy sensitive process, an additional amount of thermal energy is added, so as to preferably equal the anticipated greatest amount of thermal energy. In this manner, the characterization of the preceding thermal energy sensitive process attains its desired parameters, regardless of the amount of thermal energy actually delivered by the subsequent process.
A method of standardizing a fabrication process for an integrated circuit, where the fabrication process includes a preceding thermal energy sensitive process and at least one set of selectable seceding thermal energy delivery processes, where each one of the set of selectable seceding thermal energy delivery processes delivers different amounts of thermal energy to the integrated circuit, where one of the different amounts of thermal energy is a greatest amount of thermal energy, the method comprising the steps of:
In a method of fabricating an integrated circuit, where the method includes a preceding thermal energy sensitive process and at least one set of selectable seceding thermal energy delivery processes, where each one of the set of selectable seceding thermal energy delivery processes delivers different amounts of thermal energy to the integrated circuit, where one of the different amounts of thermal energy is a greatest amount of thermal energy, the improvement comprising the steps of:
A method of standardizing a fabrication process for an integrated circuit, where the fabrication process includes fabrication of a transistor junction and a set of selectable gate oxidation processes, where each one of the set of selectable gate oxidation processes delivers different amounts of thermal energy to the integrated circuit, where one of the different amounts of thermal energy is a greatest amount of thermal energy, the method comprising the steps of:
Dependencies are inferred from the claim text.