Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties
AssigneeInfineon Technologies AG
InventorJorg Rottstegge
Life of this patent
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Abstract
A photoresist which has high transparency at a wavelength of 157 nm and which therefore permits a greater layer thickness in photolithographic processes for the production of microchips. The photoresist includes a polymer that is prepared from a first fluorinated comonomer that includes a group cleavable under acid catalysis, a second comonomer that includes an anchor group, and a third comonomer whose degree of fluorination is tailored to the second comonomer so that at least one of the comonomers acts as an electron donor and the others act as electron acceptors in the free radical polymerization. Thus, in spite of a high degree of fluorination, the polymer can be prepared in a simple manner and in high yield.
Claims14
A chemically amplified photoresist, comprising:
- a film-forming fluorine-containing polymer copolymerized from
- a first fluorine-containing comonomer having a polymerizable carbon-carbon double bond and a group cleavable under acid catalysis,
- one second comonomer having a polymerizable carbon-carbon double bond and a nucleophilically attackable anchor group for binding an amplification agent, and
- a third comonomer having exactly one polymerizable carbon-carbon double bond and an otherwise saturated carbon skeleton, said saturated skeleton having no group cleavable under acid catalysis and no anchor group,
- one of said second and third copolymers having a fluorine atom substituent to make said respective polymerizable carbon-carbon double bond electron-poor and act as an electron acceptor when polymerized, and said carbon-carbon double bone of the other of said second and third copolymers being electron-rich to act as an electron donor when polymerized;
- a photo acid generator;
- and
- a solvent.
Dependencies are inferred from the claim text.