Resist materials for 157-nm lithography
AssigneeMass Institute of Technology (Mit)
InventorTheodore H. Fedynyshyn
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Abstract
A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.
Claims20
A positive photosensitive composition comprising a photo-acid generator and an aliphatic co-polymer comprising a first monomeric unit having a carbon atom bearing a hydroxyl group, and at least two halogen atoms attached to a carbon atom adjacent to the hydroxyl bearing carbon atom, and a second monomeric unit having a hydroxyl group protected by a protecting group,
- wherein said protecting group of the second monomeric unit is labile in the presence of in situ generated acid.
A positive photosensitive composition comprising a photoacid generator and a co-polymer having an aliphatic backbone, said co-polymer having a first monomeric unit and a second monomeric unit, said first monomeric unit having a pendant chain having a carbon atom bearing a hydroxyl group and at least two halogen atoms attached to a carbon atom adjacent to the hydroxyl bearing carbon atom, said second monomeric unit having a pendant chain having a hydroxyl group protected by a protecting group,
- wherein said protecting group of the second monomeric unit is labile in the presence of in situ generated acid.
Dependencies are inferred from the claim text.