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AssigneeCree, Inc.
InventorsRobert P. Vaudo, Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler
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A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.
A microelectronic device quality (Al,Ga,In) N boule.
A (Al, Ga, In) N boule comprising seed material and boule material grown thereon, with an interlayer between said seed material and said boule material.
A (Al,Ga,In) nitride boule or wafer, doped by nuclear transmutation doping.
A wafer parted from a boule including sequential wafer material and parting material layers, wherein the parting material is more highly absorptive of a selected radiation than is the wafer material, and wherein the wafer has been parted from the boule by impingement of said selected radiation on said parting material.
A device-quality (Al,Ga,In) N wafer.
Dependencies are inferred from the claim text.