Process for producing silica-based film, silica-based film, insulating film, and semiconductor device

Abstract

A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound at an irradiation dose of less than 500 μC/cm2 with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Dependencies are inferred from the claim text.