Long wavelength VCSEL bottom mirror
AssigneeFinisar Corporation
InventorHoki Kwon
Life of this patent
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Abstract
A vertical cavity surface emitting laser having an InP substrate and a lower mirror stack comprised of a plurality of alternating layers of AlPSb and GaPSb over the InP substrate. An InP spacer is over the lower mirror stack. An active region is over the InP spacer, and a tunnel junction is over the active region. Then a top mirror structure comprised of a low-temperature formed first GaAs buffer layer, a high-temperature formed second GaAs seed layer, an insulating structure having an opening, and a GaAs/Al(Ga)As mirror stack that is grown by lateral epitaxial overgrowth.
Claims20
A vertical cavity surface emitting laser, comprising:
- an InP substrate;
- and
- a lower mirror stack comprised of a plurality of alternating layers of AlPSb and GaPSb over the InP substrate.
A vertical cavity surface emitting laser, comprising:
- an InP substrate;
- and
- a lower mirror stack comprised of a plurality of alternating layers of AlGaInAs and AlInAs over the InP substrate.
Dependencies are inferred from the claim text.