Semiconductor laser and method for manufacturing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTetsuo Ueda, Keiji Yamane, Isao Kidoguchi, Shoji Fujimori
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Abstract
A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.
Claims9
A semiconductor laser comprising an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer,
- wherein a first dielectric film with hydrogen added therein is provided on at least one resonator end face of the semiconductor laser, and
- a second dielectric film for suppressing diffusion of hydrogen is provided between the first dielectric film and the resonator end face.
A method for manufacturing a semiconductor laser having an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer, wherein a first dielectric film with hydrogen added therein is provided on at least one resonator end face of the semiconductor laser, and a second dielectric film for suppressing diffusion of hydrogen is provided between the first dielectric film and the resonator end face, the method comprising the step of:
- forming at least the first dielectric film and the second dielectric film using an electron cyclotron resonance (ECR).
Dependencies are inferred from the claim text.