GaAs/Al(Ga)As distributed bragg reflector on InP
AssigneeFinisar Corporation
InventorHoki Kwon
Life of this patent
Estimating the term…
Abstract
A vertical cavity surface emitting laser having a GaAs/Al(Ga)As DBR mirror over an InP layer A first GaAs layer is MOCVD grown on an InP layer at a growth temperature of between 400 and 450° C. Then a second GaAs layer is grown by MOCVD at a growth temperature of about 600° C over the first GaAs layer. A GaAs/Al(Ga)As DBR mirror is then grown over the second GaAs layer. Beneficially, an insulating layer is disposed between the second GaAs layer and the GaAs/Al(Ga)As DBR mirror. The insulating layer includes an opening that exposes the second GaAs layer. Then the GaAs/Al(Ga)As DBR mirror is grown by lateral epitaxial overgrowth. The lower DBR can be comprised of a material that provides an acceptable lattice match with InP layers. A tunnel junction can be formed over an InP active region.
Claims20
A method of forming GaAs distributed Bragg reflector, comprising:
- forming an InP layer;
- growing a fast GaAs layer on the InP layer at a temperature of between 400-450° C.;
- growing a second GaAs layer on the fast GaAs layer at a temperature of about 600° C.;
- and
- forming a GaAs/Al(Ga)As distributed Bragg reflector on the second GaAs layer.
A vertical cavity surface emitting laser, comprising:
- an InP layer;
- a first GaAs layer on said InP layer, wherein said first GaAs layer is formed by MOCVD at a temperature between 400-450° C.;
- and
- a second GaAs layer on said first GaAs layer, wherein said second GaAs layer is formed by MOCVD at a temperature of around 600° C.
A vertical cavity surface emitting laser, comprising:
- an InP substrate;
- a lower DBR over said InP substrate;
- a bottom InP spacer over said lower DBR;
- an InP active layer over said bottom InP spacer;
- a top InP spacer over said InP active layer;
- a first GaAs layer on said top InP spacer, wherein said first GaAs layer is formed by MOCVD at a temperature between 400-450° C.;
- and
- a second GaAs layer on said first GaAs layer, wherein said second GaAs layer is formed by MOCVD at a temperature of around 600° C.
Dependencies are inferred from the claim text.