Magnetic memory

A magnetic memory comprising:

• a magnetoresistance effect element having a magnetic recording layer;
• a first writing wiring extending in a first direction on or below the magnetoresistance effect element, an axial cross section of the wiring being formed into a shape which is asymmetric in a vertical direction and a width of the shape being broader toward the magnetoresistance effect element;
• and
• a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

A magnetic memory comprising:

• a magnetoresistance effect element having a magnetic recording layer;
• a first writing wiring extending in a first direction below the magnetoresistance effect element, a center of gravity of an axial cross section of the first writing wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element;
• a second writing wiring extending in a second direction to intersect the first direction on the magnetoresistance effect element, a center of gravity of an axial cross section of the second writing wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element;
• and
• a writing circuit configured to pass currents through the first and second writing wirings in order to record an information in the magnetic recording layer by magnetic fields generated by the currents.

A magnetic memory comprising:

• a magnetoresistance effect element having a magnetic recording layer;
• a first writing wiring extending in a first direction below the magnetoresistance effect element, an axial cross section of the first writing wiring being formed into a shape which is asymmetric in a vertical direction and a width of the shape being broader toward the magnetoresistance effect element;
• a second writing wiring extending in a second direction to intersect the first direction on the magnetoresistance effect element, an axial cross section of the second writing wiring being formed into a shape which is asymmetric in a vertical direction and a width of the shape being broader toward the magnetoresistance effect element;
• and
• a writing circuit configured to pass currents through the first and second writing wirings in order to record an information in the magnetic recording layer by magnetic fields generated by the currents.

A magnetic memory comprising:

• a magnetoresistance effect element having a magnetic recording layer;
• a first writing wiring extending in a first direction below the magnetoresistance effect element,
• a second writing wiring extending in a second direction to intersect the first direction on the magnetoresistance effect element;
• and
• a writing circuit configured to pass currents through the first and second writing wirings in order to record an information in the magnetic recording layer by magnetic fields generated by the currents,
• a shape of an axial cross section of the first writing wiring being different from a shape of an axial cross section of the second writing wiring,
• each of the shapes of the axial cross sections of the first and second writing wirings being rectangular or trapezoidal, and having a first side closer to the magnetoresistance effect element and a second side remoter from the magnetoresistance effect element,
• one of the first and second writing wirings being remoter from the magnetoresistance effect element than another of the first and second writing wirings, and
• the remoter wiring having a larger ratio of length of the first side to the second side than the ratio of another of the first and second writing wirings.