Resistance variable 'on' memory

A memory element comprising:

• a chalcogenide glass element;
• a first electrode connected to said chalcogenide glass element;
• and
• a second electrode comprising a platinum electrode connected to said chalcogenide glass element.

A memory element comprising:

• a resistance variable material;
• a first electrode connected to said chalcogenide glass;
• and
• a second electrode connected to said chalcogenide glass said first and second electrodes being formed of predetermined materials which cause said element to turn on spontaneously.

A memory element comprising:

• a resistance variable material;
• a first electrode connected to said resistance variable material;
• a second electrode connected to said resistance variable material;
• and
• said first and second electrode being formed of materials which cause said element to move to a low resistance state.

A memory element comprising:

• a first conductive element;
• a resistance variable material;
• and
• a second conductive element, said first and second conductive elements providing a differential electrochemical potential for stabilizing said memory element in a predetermined lower resistance state.

A memory element comprising:

• a silver electrode;
• a doped glass comprising a germanium-selenide composition in contact with said silver electrode;
• and
• a platinum electrode in contact with said doped glass.

A memory element comprising:

• a resistance variable material;
• a first electrode connected to said resistance variable material;
• a second electrode connected to said resistance variable material;
• said first and second electrodes providing a differential electrochemical potential for stabilizing said memory element in an at rest low resistance state;
• a first circuit for applying a programming voltage across said first and second electrodes to program said memory element from said at rest low resistance state to a second high resistance state;
• and
• a second circuit for applying a refresh voltage across said first and second electrodes to maintain said element at said high resistance state.

A method of forming a memory element comprising:

• providing a first electrode comprising a first material in contact with a resistance variable material;
• providing a second electrode comprising a second material in contact with said resistance variable material;
• and
• said first and second material compositions of said first and second electrodes providing an electrochemical potential across said resistance variable material sufficient to place said glass material in a stable low resistance state.

A method of stabilizing a resistance variable memory element having a first electrode and a second electrode comprising the steps of:

• providing a difference in work functions of each said first and second electrodes;
• providing an electrochemical potential across said resistance variable memory element with said first and second electrodes which places said resistance variable memory element in a low resistance state;
• and
• said electrochemical potential restoring said resistance variable memory element to said low resistance state after said resistance variable memory element is placed in a high resistance state.

A method of operating a resistance variable memory element comprising the steps of:

• stabilizing said resistance variable memory element to an at rest low resistance state by utilizing a difference in work function between a first and a second electrode of said resistance variable memory element;
• applying a first voltage across said first electrode and said second electrode to program said resistance variable memory element from said at rest low resistance to a second high resistance state;
• and
• applying a second voltage across said first electrode and said second electrode to maintain said resistance variable memory element at said high resistance state.

A method of operating a memory element having a first and second electrode comprising the steps of:

• providing a platinum electrode in contact with a resistance variable material;
• providing a silver electrode in contact with said resistance variable material;
• and
• stabilizing said element in a low resistance state using electrochemical properties of said second silver electrode and said first platinum electrode.