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US 2003/0156448 A1Published application
Magnetic thin-film memory device for quick and stable reading data
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorHideto Hidaka
Life of this patent
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Abstract
An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation delays of the read word lines and accelerate the data read operation. Activation of each read word line is controlled by a write word line in accordance with a row selection result in a hierarchical manner. A word-line-current control circuit forms and cuts off the current path of a write word line correspondingly to data write and data read.
Claims28
A magnetic thin-film memory device comprising:
- a memory array having a plurality of magnetic memory cells arranged in a matrix, p1 in which each of said magnetic memory cells includes
- a storage section whose resistance values are changed in accordance with the level of storage data written when a data-write magnetic field applied by first and second data-write currents is larger than a predetermined magnetic field and
- a memory-cell selection gate connected with said storage section in series;
- a plurality of write word lines provided corresponding to rows of said magnetic memory cells and formed by wirings having a first resistivity,
- each of which is selectively activated in accordance with a row selection result under both data write and data read;
- a word-line current control circuit for forming and cutting off the path of said first data-write current for at least activated one of said write word lines under said data write and data read;
- a plurality of data lines provided correspondingly to columns of said magnetic memory cells;
- a read/write control circuit for respectively supplying said second data-write current and data read current to at least that one of said data lines which one corresponds to the selected column, under data write and data read;
- and
- a plurality of read word lines provided corresponding to rows of said magnetic memory cell rows and formed by wirings respectively having a second resistivity higher than the said first resistivity;
- wherein
- each of said read word lines is selectively activated together with corresponding one of said write word lines under said data read, and
- at least activated one of said read word lines turns ON the corresponding memory-cell selection gate.
10 more elements
A magnetic thin-film memory device comprising:
- a memory array having a plurality of magnetic memory cells arranged in a matrix,
- in which each of said magnetic memory cell includes
- a storage section whose resistance values are changed in accordance with the level of storage data written when a data-write magnetic field applied by first and second data-write currents is larger than a predetermined magnetic field and
- a memory-cell selection gate for passing a data read current through said storage section under data read;
- a plurality of write word lines provided correspondingly to rows of said magnetic memory cells to constitute a write-word-line pair by every two write word lines,
- in which said two write word lines constituting said write-word-line pair are electrically connected at least one end of said memory array under data write;
- a word-line driving circuit provided at the other end of said memory array, for setting said two write word lines constituting said write-word-line pair corresponding to the selected row to first and second voltages one each in order to circulate said first data-write current under said data write;
- a plurality of data lines provided correspondingly to columns of said magnetic memory cells;
- a read/write control circuit for respectively supplying said second data-write current and said data read current at least that one of said data lines, which corresponds to the selected column, under said data write and said data read;
- and
- a plurality of read word lines provided corresponding to said rows each turning ON said memory-cell selection gate corresponding to a row selection result under said data read.
8 more elements
A magnetic thin-film memory device comprising:
- a memory array having a plurality of magnetic memory cells arranged in a matrix, and being divided into a plurality of regions along the column direction,
- in which each of said magnetic memory cells includes
- a storing section whose resistance values are changed in accordance with the level of storage data to be written by a data-write magnetic field generated by first and second data write currents and
- a memory-cell selection gate connected in series with said storing section;
- a plurality of write word lines provided corresponding to rows of said magnetic memory cells in common to said regions and respectively constituted of a wiring having a first resistivity;
- said write word lines are selectively activated in accordance with a row selection result in order to supply said first data write current under data write;
- a plurality of data lines provided corresponding to columns of said magnetic memory cells;
- a read/write control circuit for respectively supplying said second data write current and data read current to at least that one of said data lines, which corresponds to the selected column, under data write and data read;
- a plurality of main read lines provided for said plurality of regions in common and respectively constituted of a wiring having a second resistivity;
- a plurality of read word lines provided corresponding to said rows for each of said plurality of regions and respectively constituted of a wiring having a third resistivity higher than said first and second resistivities,
- each of said read word line being corresponding to any one of said main read word lines;
- and
- a plurality of read-word-line drivers provided corresponding to said read word lines, each for activating corresponding one of said read word lines in accordance with activation of corresponding one of said main read word lines under said data read;
- and
- at least activated one of said read word lines turns ON the corresponding memory-cell selection gate.
12 more elements
Dependencies are inferred from the claim text.