Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same
AssigneeAxon Technologies Corporation
InventorMichael N. Kozicki
Life of this patent
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Abstract
A circuit for programming a microelectronic device is disclosed. The circuit is configured to provide a reversible bias across the microelectronic device to perform erase and write functions. One configuration of the programming circuit includes one or more inputs coupled to the programmable device and a complimentary metal-oxide semiconductor circuit coupled to the programmable device. This design allows for writing and erasing of the programmable cell using a low and high voltage input.
Claims19
A circuit for programming a microelectronic memory device, the circuit comprising:
- a first input coupled to a first portion of the memory device;
- a second input coupled to a first switch and a second switch, the first switch coupled to a voltage source and the second switch coupled to ground;
- and
- a second input coupled to the first switch and the second switch,
- wherein the circuit is configured to provide a first bias and a second to the memory device wherein the polarity of the first bias is opposite the polarity of the second bias.
A circuit for reversibly altering an electrical property of a microelectronic device, the circuit comprising:
- a write input coupled to a first portion of the microelectronic device;
- a select switch coupled between the write input and the first portion of the microelectronic device;
- a first switch coupled to the write input and a voltage source;
- and
- a second switch coupled to write input and ground,
- wherein the first switch and the second switch are coupled to a second portion of the microelectronic device, and
- wherein the circuit is configured to provide a first bias and a second to the microelectronic device wherein the polarity of the first bias is opposite the polarity of the second bias.
The circuit of claim 7, wherein the first switch and the second switch form a CMOS device.
A circuit for programming a programmable structure, the circuit comprising:
- a write input coupled to a first portion of the structure;
- a CMOS transistor having an output coupled to a second portion of the structure and to the write input;
- and
- a select transistor coupled between the wrote input and the programmable structure, wherein the programmable structure comprises an ion conductor and conductive material dispersed within the ion conductor.
Dependencies are inferred from the claim text.