Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same

A method for fabricating a capacitor having a first and a second electrode, comprising the following steps:

• a) forming a first insulative layer overlying a substrate;
• b) forming an opening in said first insulative layer in order to expose said substrate;
• c) forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor;
• d) creating a recess in said opening between a surface of said first insulative layer and a surface of said conductive plug;
• e) forming a conductive barrier layer, for preventing diffusion of atoms, in said recess such that said conductive barrier layer is surrounded on sidewalls by said first insulative layer, said conductive barrier layer forming a second portion of the first electrode;
• f) forming a second insulative layer overlying said first insulative layer and said conductive barrier layer;
• g) creating an opening in said second insulative layer, said opening exposing at least a portion of said conductive barrier layer;
• and
• h) creating an oxidation resistant layer overlying said second insulative layer and said portion of said conductive barrier layer exposed in said step of creating said opening, said oxidation resistant layer forming a third portion of the first electrode.

A capacitor having a storage node electrode, comprising:

• a) a first insulative region overlying a substrate;
• b) a contact plug region having a bottom surface, a top surface, and a sidewall surface, said bottom surface contacting said substrate, said sidewall surface adjacent to said first insulative region, and said top surface recessed from a top surface of said first insulative region;
• c) a diffusion barrier region overlying said contact plug, said diffusion barrier region having a top surface, said top surface of said diffusion barrier region substantially planar to said top surface of said insulative region;
• d) a second insulative region overlying at least a portion of said first insulative region;
• and
• e) an oxidation resistant region overlying and adjacent to at least a portion of said top surface of said diffusion barrier region, said diffusion barrier region minimizing a diffusion of atoms between said contact plug and said oxidation resistant region, said oxidation resistant region having an upper sidewall surface and a lower sidewall surface, at least said lower sidewall surface adjacent to said second insulative region overlying said first insulative region and overlying a portion of said diffusion barrier region without said overlying oxidation resistant region, at least said oxidation resistant region forming the storage node electrode of the capacitor.