Magnetoresistance effect device, magnetoresistance head and method for producing magnetoresistance effect device
OwnerYasuhiro Kawawake, Mitsuo Satomi +2inventors
InventorsYasuhiro Kawawake, Mitsuo Satomi, Yasunari Sugita, Hiroshi Sakakima
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Abstract
A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
Claims26
A magnetoresistance effect device, comprising a multilayer film, the multilayer film comprising an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, wherein:
- the antiferromagnetic film comprises an α-Fe2O3 film;
- and
- a surface roughness of the multilayer film is about 0.5 nm or less.
A magnetoresistance effect device, comprising a multilayer film, the multilayer film comprising an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, wherein:
- the antiferromagnetic film comprises a layered structure including an α-Fe2O3 film and a second anti-ferromagnetic film.
A magnetoresistance effect device, comprising a multilayer film, the multilayer film comprising an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, wherein:
- the antiferromagnetic film comprises an α-Fe2O3 film;
- and
- a thickness of the α-Fe2O3 film is in a range between about 5 nm and about 40 nm.
A magnetoresistance effect device, comprising a multilayer film, the multilayer film comprising a first antiferromagnetic film, a first ferromagnetic film, a first non-magnetic film, a second ferromagnetic film, a second non-magnetic film, a third ferromagnetic film and a second antiferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, wherein:
- the first antiferromagnetic film comprises an α-Fe2O3 film;
- and
- a surface roughness of the multilayer film is about 0.5 nm or less.
A magnetoresistance effect device, comprising a multilayer film, the multilayer film comprising a first antiferromagnetic film, a first ferromagnetic film, a first non-magnetic film, a second ferromagnetic film, a second non-magnetic film, a third ferromagnetic film and a second antiferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, wherein:
- the first antiferromagnetic film comprises a layered structure including an α-Fe2O3 film and a third antiferromagnetic film.
A method for producing a magnetoresistance effect device, the device comprising a multilayer film, the multilayer film comprising an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, the method comprising:
- a first step of forming the antiferromagnetic film having a thickness in a range between about 5 nm and about 40 nm on the non-magnetic substrate directly or via the underlying layer;
- and
- a second step of depositing, on the antiferromagnetic film, the first ferromagnetic film, the non-magnetic film and the second ferromagnetic film in this order so that a surface roughness of the multilayer film is about 0.5 nm or less, wherein
- the first step comprises a step of sputtering a target whose main component is α-Fe2O3.
A method for producing a magnetoresistance effect device, the device comprising a multilayer film, the multilayer film comprising a first antiferromagnetic film, a first ferromagnetic film, a first non-magnetic film, a second ferromagnetic film, a second non-magnetic film, a third ferromagnetic film and a second antiferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer, the method comprising:
- a first step of forming the first antiferromagnetic film on the non-magnetic substrate directly or via the underlying layer;
- a second step of depositing, on the antiferromagnetic film, the first ferromagnetic film, the first nonmagnetic film, the second ferromagnetic film, the second non-magnetic film, the third ferromagnetic film and the second antiferromagnetic film in this order so that a surface roughness of the multilayer film is about 0.5 nm or less, wherein
- the first step comprises a step of sputtering a target whose main component is α-Fe2O3.
Dependencies are inferred from the claim text.