Material with spectrally selective reflection

Material with spectrally selective reflection in the primary valences red, green and blue, characterized by the following layers:

• 8.1 a first layer of a material with a high index of refraction, for example TiO2, Ta2O5, TiOxNy or Bi2O3, which is approximately 400 to 600 nm thick;
• 8.2 a second layer of a material with a low index of refraction, for example SiO2, which is approximately 127 nm thick and which is disposed on the first layer of TiO2, Ta2O5, TiOxNy or Bi2O3;
• 8.3 a third layer of a material with a high index of refraction, for example TiO2, Ta2O5, TiOxNy or Bi2O3, which is approximately 400 to 600 nm thick and which is disposed on the second layer of SiO2;
• 8.4 a fourth layer of a material with a low index of refraction, for example SiO2, which is approximately 72 nm thick and which is disposed on the third layer of TiO2, Ta2O5, TiOxNy or Bi2O3;
• 8.5 a fifth layer of a material with a high index of refraction, for example TiO2, Ta2O5, TiOxNy or Bi2O3, which is approximately 400 to 600 nm thick and which is disposed on the fourth layer of SiO2.

A material with spectrally selective reflection in the primary valences red, green and blue, comprising:

• a first layer of a material with a high index of refraction which is approximately 400 to 600 nm thick;
• a second layer of a material with a low index of refraction which is approximately 127 nm thick and which is disposed on said first layer;
• a third layer of a material with a high index of refraction which is approximately 400 to 600 nm thick and which is disposed on said second layer;
• a fourth layer of a material with a low index of refraction which is approximately 72 nm thick and which is disposed on said third layer;
• a fifth layer of a material with a high index of refraction which is approximately 400 to 600 nm thick and which is disposed on said fourth layer;
• wherein said material with a high index of refraction in at least one of said first layer, said third layer and said fifth layer is selected from the group consisting of TiO2, Ta2O5, TiOxNy and Bi2O3 and said material with a low index of refraction in said second layer and said fourth layer are each SiO2.