Resonator-type semiconductor optical modulator with asymmetrical electrode structure

Abstract

A resonance-type semiconductor optical modulator has an asymmetrical electrode structure in which the microwave power is applied to the semiconductor optical modulation element via a resonator. The resulting higher modulation voltage provides high modulation efficiency while controlling the amount of power consumption. The semiconductor optical modulation element includes an open-ended stub, a short-ended stub connected to the open-ended stub, a feeding line connected to both stubs and common electrodes. The stubs are formed in contact and the semiconductor optical modulation element is connected to the open-ended stub. Otherwise, the resonance-type semiconductor optical modulator can include a semiconductor optical modulation element, a first open-ended stub, a second open-ended stub connected to the first open-ended stub and having a different length than the first open-ended stub, a feeding line that is electromagnetically connected to both open-ended stubs, and common electrodes, in which the first and second open-ended stubs are formed in mutual contact and the semiconductor optical modulation element is connected to an open-ended stub portion other than a portion connecting the feeding line to the open-ended stubs.

Dependencies are inferred from the claim text.