US 2003/0155980 A1 · Semiconductor device including semiconductor element of high breakdown voltage

Abstract

A first NMOS transistor has its source connected to ground and its drain connected to the source of a second NMOS transistor of high breakdown voltage via an inductor. The second NMOS transistor of high breakdown voltage has its drain connected to a power supply line Vdd via the inductor. An output Vout is provided from the drain of the second NMOS transistor. When an input voltage Vin is applied to the gate of the first NMOS transistor and a bias voltage Vg2 is applied to the gate of the second NMOS transistor, the first and second NMOS transistors operate. The voltage amplitude of the load end of the second NMOS transistor of high breakdown voltage connected to the inductor swings about the power supply voltage. The voltage amplitude increases as the output voltage becomes higher.

Claims4

Dependent claims

A semiconductor device including a semiconductor element of high breakdown voltage, comprising:

a first transistor including first and second conduction terminals rendered electrically conductive therebetween, said first conduction terminal having a first voltage applied;
a second transistor of a breakdown voltage higher than the breakdown voltage of said first transistor, and including third and fourth conduction terminals rendered electrically conductive therebetween, a second voltage higher than said first voltage to the third conduction terminal of said second transistor through a load element;
and
a passive element connected between the second conduction terminal of said first transistor and the fourth conduction terminal of said second transistor.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device including semiconductor element of high breakdown voltage

Life of this patent

Semiconductor device including semiconductor element of high breakdown voltage

Life of this patent

Abstract

Claims4