High-speed sense amplifier with auto-shutdown precharge path

A sense amplifier having an input node configured to be connected to a bit line of a memory array, the sense amplifier comprising:

• a transistor having a first conduction terminal connected to the input node and a second conduction terminal connected to an output node;
• a sensing inverter having an inverter input coupled to the output node, and having a threshold voltage and an inverter output;
• and
• a pre-charge transistor having
• a pre-charge control terminal coupled to the inverter output,
• a first pre-charge conduction terminal configured to be connected to a voltage supply providing a bias voltage, and
• a second pre-charge conduction terminal connected to the output node;
• and
• a data latch circuit, coupled to the inverter output, including
• a data latch inverter having a complementary pair of transistors having a common gate connection coupled to a sensing inverter through a pass gate;
• and
• a diode connection disposed between the voltage supply and the complementary pair of transistors.

A sense amplifier comprising:

• a pass transistor having
• a first pass conduction terminal connected to a bit line,
• a second pass conduction terminal connected to a data output line, and
• a pass control terminal connected to a transfer bias network;
• a pre-charge circuit disposed between a voltage supply input and the data output line, including a negative feedback circuit establishing a pre-charge voltage on the data output line;
• and
• a pull-up transistor having
• a first pull-up conduction terminal connected to the voltage supply input,
• a second pull-up conduction terminal connected to the data output line, and
• a pull-up control terminal connected to a ground node.