Method for forming cantilever beam probe card and probe card formed

A method for forming a cantilever beam probe card on a semiconducting substrate comprising the steps of:

• providing a semiconducting substrate having a top surface and a bottom surface;
• depositing an insulating material layer of at least 0.1 μm thickness on said top surface;
• patterning and etching at least two via holes in said insulating material layer;
• depositing a first metal layer of at least 0.15 μm thickness on top of and measured from said semiconducting substrate filling said at least two via holes and covering a top surface of said insulating material layer;
• depositing a second metal layer of at least 0.1 μm thickness on top of said first metal layer, said second metal layer being formed of a metal different than said first metal layer;
• patterning and etching at least two via holes in said bottom surface of said semiconducting substrate exposing said at least two via holes formed in said insulating material layer;
• filling said at least two via holes in said semiconducting substrate with a metal forming at least two vias;
• patterning and etching at least two cone-shaped microprobes from said second metal layer;
• patterning and etching a trench in said first metal layer electrically insulating said at least two cone-shaped microprobes from each other;
• and
• etching away said insulating material layer from said top surface of said semiconducting substrate.