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AssigneesToyo Kohan Co., Ltd., Tadatomo Suga
InventorsKinji Saijo, Shingji Ohsawa, Hiroaki Okamoto, Kazuo Yoshida, Tadatomo Suga
Estimating the term…
A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.
A semiconductor device comprising a semiconductor element and conductor wirings on the semiconductor element formed by etching a wiring-forming metal foil.
A method of fabricating a semiconductor device including a step of laminating a wiring-forming metal foil to a semiconductor wafer formed at the surface thereof with circuit elements on the electrode forming surface side, a step of photo-etching the metal foil to form a resist wiring pattern, a step of etching the metal foil and a step of dividing into individual elements.
A semiconductor device comprising a semiconductor element, conductor wirings on the semiconductor element formed by etching a wiring-forming metal foil, and solder bumps.
A method of fabricating a semiconductor device including a step of laminating a wiring-forming metal foil to a semiconductor wafer formed at the surface thereof with circuit elements on the electrode forming surface side, a step of forming a resist wiring pattern on the metal, a step of etching the metal foil, a step of forming solder bumps and a step of dividing into individual elements.
A semiconductor device comprising a semiconductor element and bumps on the semiconductor element formed by etching a wiring-forming multi-layered metal foil.
A method of fabricating a semiconductor device including a step of laminating a wiring-forming multi-layered metal foil to a semiconductor wafer formed at the surface thereof with circuit elements on the electrode forming surface side, a step of forming a bump-forming resist wiring pattern on the multi-layered metal foil, a step of selectively etching the metal foil, a step of removing the etching stopper layer, a step of forming a wiring-forming resist wiring pattern and a step of forming wiring by etching, and a step of dividing into individual elements.
A semiconductor device comprising a semiconductor element, conductor wirings having bumps on the semiconductor element formed by etching a wiring-forming multi-layered metal foil, an insulative resin and solder bumps.
A method of fabricating a semiconductor device including a step of laminating a wiring-forming multi-layered metal foil to a semiconductor wafer formed at the surface thereof with circuit elements on the electrode forming surface side, a step of forming a bump-forming resist wiring pattern on the multi-layered metal foil, a step of selectively etching the metal foil, a step of removing the etching stopper layer, a step of forming a wiring-forming resist wiring pattern and a step of forming wirings by etching, a step of coating an insulative resin and polishing the surface thereof, a step of forming solder bumps, and a step of dividing into individual elements.
Dependencies are inferred from the claim text.