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US 2003/0155631 A1Published application
Vertical bipolar transistor
AssigneeInfineon Technologies AG
InventorsPeter Nelle, Matthias Stecher
Life of this patent
Estimating the term…
Abstract
A vertical bipolar transistor has a J-FET incorporated in an epitaxial layer. The pinch-off voltage of the J-FET is less than the collector-emitter breakdown voltage of a bipolar transistor without the J-FET. This results in a considerable increase in the collector-emitter breakdown voltage up to 30 V or more being possible without having to except limitations with regard to dielectric strength and on resistivity
Claims29
A vertical bipolar transistor, comprising:
- a semiconductor layer;
- a doped buried layer of a first conductivity type disposed in said semiconductor layer;
- a base zone of a second conductivity type, being opposite to said first conductivity type, disposed in said semiconductor layer at a distance from said buried layer;
- an emitter zone of said first conductivity type disposed in said base zone;
- and
- at least one region formed of said second conductivity type disposed in said semiconductor layer in a region approximately below said emitter zone, said region forming a J-FET having a pinch-off voltage less than a collector-emitter breakdown voltage of the vertical bipolar transistor.
3 more elements
A vertical bipolar transistor, comprising:
- a semiconductor layer;
- a doped buried layer of a first conductivity type disposed in said semiconductor layer;
- a base zone of a second conductivity type, being opposite to said first conductivity type, disposed in said semiconductor layer at a distance from said buried layer;
- an emitter zone of said first conductivity type disposed in said base zone;
- and
- at least one region formed of said second conductivity type disposed in said semiconductor layer in a region approximately below said emitter zone and forming a J-FET, said region having a doping concentration being approximately a factor of 10 less than a doping concentration of said base zone, and a pinch-off voltage of said J-FET being less than a collector-emitter breakdown voltage of the vertical bipolar transistor.
3 more elements
Dependencies are inferred from the claim text.