Low forward voltage drop schottky barrier diode and manufacturing method therefor
AssigneesPyramis Corporation, Delta Electronics, Inc.
InventorsJun Zeng, Ming-Jiang Zhou, Tzong-Shiann Wu
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Abstract
A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and forming a metal layer on the substrate having plural trenches thereon to form a barrier metal layer between the substrate and the surface metal layer for forming the Schottky barrier diode.
Claims16
A method for manufacturing a Schottky barrier diode, comprising steps of:
- providing a substrate;
- forming plural trenches on said substrate;
- and
- forming a metal layer on said substrate having said plural trenches thereon to form a barrier metal layer between said substrate and said metal layer for forming said Schottky barrier diode.
A Schottky barrier diode structure, comprising:
- a substrate having plural trenches;
- a metal layer formed on said substrate having said plural trenches thereon;
- and
- a barrier metal layer formed between said substrate and said metal layer to increase a surface contact area of said Schottky barrier diode through said plural trenches.
An integrated structure for being applied in a power semiconductor device, comprising:
- a MOSFET (Metal Oxide Semiconductor Field Effect Transistor);
- and
- a Schottky barrier diode comprising:
- a substrate having plural trenches;
- a metal layer formed on said substrate having said plural trenches thereon;
- and
- a barrier metal layer formed between said substrate and said metal layer to increase a surface contact area of said Schottky barrier diode through said plural trenches.
Dependencies are inferred from the claim text.