US 2003/0155625 A1 · Semiconductor light receiving device and semiconductor part

Abstract

Disclosed is a semiconductor light receiving device which receives only long-wavelength side light, annihilates carriers generated in an optical filter layer without application of a voltage and prevents generation of noise. The semiconductor light receiving device includes a semiconductor substrate, an optical filter layer formed on the semiconductor substrate, a first conductivity type contact layer formed on the optical filter layer, a light receiving layer formed on the first conductivity type contact layer, a second conductivity type contact layer formed on the light receiving layer, a first conductivity type electrode formed on the first conductivity type contact layer, a second conductivity type electrode formed on the second conductivity type contact layer, and an antireflection film formed on a back surface of the semiconductor substrate. The optical filter layer annihilates carriers generated therein by radiative recombination and decreases the intensity of short-wavelength side light produced by the radiative recombination.

Claims12

Dependent claims

A semiconductor light receiving device which receives only long-wavelength side light in input light containing two wavelengths short-wavelength side light, and comprises:

a semiconductor substrate;
an optical filter layer formed on said semiconductor substrate;
a first conductivity type contact layer formed on said optical filter layer;
a light receiving layer having a bandgap wavelength longer than that of said long-wavelength side light and formed on said first conductivity type contact layer;
a second conductivity type contact layer formed on said light receiving layer;
a first conductivity type electrode formed on said first conductivity type contact layer;
a second conductivity type electrode formed on said second conductivity type contact layer;
and
an antireflection film formed on a back surface of said semiconductor substrate,
whereby said optical filter layer annihilates carriers, generated in said optical filter layer by absorption of short-wavelength side light, by radiative recombination and decreases an intensity of short-wavelength side light produced by said radiative recombination.

7 more elements

A semiconductor part which receives only long-wavelength side light in input light containing two wavelengths short-wavelength side light, and comprises:

a semiconductor substrate;
an optical filter layer formed on said semiconductor substrate;
an antireflection film formed on said optical filter layer;
and
an antireflection film formed on a back surface of said semiconductor substrate,
whereby said optical filter layer annihilates carriers, generated in said optical filter layer by absorption of short-wavelength side light, by radiative recombination and decreases an intensity of short-wavelength side light produced by said radiative recombination.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor light receiving device and semiconductor part

Life of this patent

Semiconductor light receiving device and semiconductor part

Life of this patent

Abstract

Claims12