Semiconductor light receiving device

A semiconductor light receiving device to which light having a plurality of wavelengths is input from a side direction and which comprises:

• a light receiving surface which is formed on an inclined surface crossing a back and sides of a semiconductor substrate, to which said light having said plurality of wavelengths is input and which demultiplexes said light having said plurality of wavelengths in accordance with differences among refraction angles corresponding to said wavelengths;
• a first reflection film, formed opposite to said light receiving surface and on an inclined surface crossing said back and sides of said semiconductor substrate, for reflecting said light having said plurality of wavelengths;
• a second reflection film, formed opposite to said first reflection film and on a recessed surface crossing a top and said sides of said semiconductor substrate, for reflecting reflected light from said first reflection film;
• and
• a plurality of light receiving sections, formed on said back of said semiconductor substrate, for receiving light for each of said plurality of wavelengths.

A semiconductor light receiving device to which light having a plurality of wavelengths is input from a side direction and which comprises:

• a light receiving surface which is formed on an inclined surface crossing a back of a semiconductor substrate, to which said light having said plurality of wavelengths is input and which demultiplexes said light having said plurality of wavelengths in accordance with differences among refraction angles corresponding to said wavelengths;
• a first reflection film, formed opposite to said light receiving surface and on an inclined surface crossing said back and sides of said semiconductor substrate, for reflecting said light having said plurality of wavelengths;
• a second reflection film, formed opposite to said first reflection film and on a recessed surface crossing a top and said sides of said semiconductor substrate, for reflecting reflected light from said first reflection film;
• a third reflection film, formed on said back of said semiconductor substrate, for reflecting reflected light from said second reflection film;
• and
• a plurality of light receiving sections, formed on said top of said semiconductor substrate, for receiving light for each of said plurality of wavelengths.