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US 2003/0155621 A1Published application
Semiconductor device and method for fabricating the same
AssigneeMatsushita Electronics Corporation
InventorsMasaru Moriwaki, Takayuki Yamada, Kazuhiko Yamamoto
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Abstract
After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.
Claims8
A semiconductor device comprising:
- a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film and formed on a gate insulating film provided on a semiconductor substrate, and an upper-layer gate electrode composed of a tungsten film an formed on the lower-layer gate electrode;
- and
- a capacitor comprised of a lower electrode composed of the titanium nitride film, a capacitor insulating film formed on the lower electrode, and an upper electrode composed of the tungsten film and formed on the capacitor insulating film.
A semiconductor device comprising:
- a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film and formed on a gate insulating film provided on a semiconductor substrate, and an upper-layer gate electrode composed of a tungsten film and formed on the lower-layer gate electrode;
- and
- a resistor composed of the titanium nitride film.
A semiconductor device comprising:
- a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film deposited by chemical vapor deposition on a semiconductor substrate and of an upper-layer gate electrode composed of a tungsten film deposited by sputtering on the titanium nitride film;
- and
- a capacitor comprised of a lower electrode composed of the titanium nitride film, of a capacitor insulating film formed on the lower electrode, and of an upper electrode composed of the tungsten film formed on the capacitor insulating film.
A semiconductor device comprising:
- a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film deposited by chemical vapor deposition on a semiconductor substrate and of an upper-layer gate electrode composed of a tungsten film deposited by sputtering on the titanium nitride film;
- and
- a resistor composed of the titanium nitride film.
Dependencies are inferred from the claim text.