Electro-optical device and semiconductor circuit

A method of fabricating a semiconductor device comprising a plurality of thin film transistors, the method comprising:

• forming a base film on a substrate;
• forming a semiconductor film on the base film;
• providing a solution containing a catalytic element for promoting a crystallization of the semiconductor film on the semiconductor film;
• crystallizing the semiconductor film provided with the solution by a heat treatment;
• and
• removing the catalytic element in the crystallized semiconductor film;
• and
• etching the crystallized semiconductor film into a plurality of semiconductor layers, each having at least a channel region for a thin film transistor,
• wherein the channel region comprises {110}, {211}, {321}, {431}, {532} and {541} plane orientation.

A method of fabricating a semiconductor device comprising a plurality of thin film transistors, the method comprising:

• forming a base film on a substrate;
• forming a semiconductor film on the base film;
• providing a solution containing a catalytic element for promoting a crystallization of the semiconductor film on the semiconductor film;
• crystallizing the semiconductor film provided with the solution by a heat treatment;
• and
• removing the catalytic element in the crystallized semiconductor film;
• and
• etching the crystallized semiconductor film into a plurality of semiconductor layers, each having at least a channel region for a thin film transistor,
• wherein standard deviations of threshold voltages and subthreshold coefficients are 0.1 V or less and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.

A method of fabricating a semiconductor device comprising a plurality of thin film transistors, the method comprising:

• forming a base film on a substrate;
• forming a semiconductor film on the base film, wherein the base film and the semiconductor film are formed without exposing to air;
• providing a solution containing a catalytic element for promoting a crystallization of the semiconductor film on the semiconductor film;
• crystallizing the semiconductor film provided with the solution by a heat treatment;
• and
• removing the catalytic element in the crystallized semiconductor film;
• and
• etching the crystallized semiconductor film into a plurality of semiconductor layers, each having at least a channel region for a thin film transistor,
• wherein the channel region comprises {110}, {211}, {321}, {431}, {532} and {541} plane orientation.

A method of fabricating a semiconductor device comprising a plurality of thin film transistors, the method comprising:

• forming a base film on a substrate;
• forming a semiconductor film on the base film, wherein the base film and the semiconductor film are formed without exposing to air;
• providing a solution containing a catalytic element for promoting a crystallization of the semiconductor film on the semiconductor film;
• crystallizing the semiconductor film provided with the solution by a heat treatment;
• and
• removing the catalytic element in the crystallized semiconductor film;
• and
• etching the crystallized semiconductor film into a plurality of semiconductor layers, each having at least a channel region for a thin film transistor,
• wherein standard deviations of threshold voltages and subthreshold coefficients are 0.1 V or less and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.