Back to results
US 2003/0155610 A1Published application
Semiconductor component with enhanced avalanche resistance
AssigneeInfineon Technologies AG
InventorsAndreas Schlogl, Markus Schmitt, Hans-Joachim Schulze, Markus Vosseburger, Armin Willmeroth
Life of this patent
Estimating the term…
Abstract
The invention relates to a semiconductor component with enhanced avalanche resistance. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6% or more above the static reverse voltage at the same temperature.
Claims54
A semiconductor component with enhanced avalanche resistance, comprising:
- two semiconductor electrodes;
- a semiconductor body connected to said two electrodes;
- a drift zone defining a region and provided between said two electrodes, said region generating charge carriers;
- areas of one conductivity type and areas of the other conductivity type, opposite the one conductivity type, being disposed in said drift zone in a given direction between said two electrodes;
- and
- an overall doping of said drift zone being set by appropriate doping of said areas selected from the group consisting of the one conductivity type and of the other conductivity type, said overall doping of said drift zone producing an electric field having a local peak limiting the charge carriers being generated to a narrow area during avalanches, and said narrow area generating at least about 50% of the charge carriers generated in said drift zone and assuming at most 15% of a length of a section of said drift zone being located between said at least two electrodes.
3 more elements
A semiconductor component with enhanced avalanche resistance, comprising:
- two electrodes;
- a semiconductor body connected to said two electrodes;
- a drift zone defining a region and provided between said two electrodes said region generating charge carriers;
- areas of one conductivity type and areas of the other conductivity type, opposite the one conductivity type, being disposed in said region of said drift zone;
- doping in said drift zone in a direction between said two electrodes being set by proton irradiation and creating a local peak in an electric field based on said doping in said drift zone.
2 more elements
A semiconductor component with enhanced avalanche resistance, comprising:
- two electrodes;
- a semiconductor body connected to said two electrodes;
- a drift zone defining a region and being provided between said two electrodes, said region generating charge carriers;
- areas of one conductivity type and areas of the other conductivity type, opposite the one conductivity type, being disposed in said region of said drift zone;
- doping in said drift zone in a direction between said two electrodes being set by helium irradiation from a source side.
2 more elements
Dependencies are inferred from the claim text.