Method to alter chalcogenide glass for improved switching characteristics
AssigneeMicron Technology, Inc.
InventorsKristy A. Campbell, John Moore, Terry L. Gilton, Joseph F. Brooks
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Abstract
The present invention is related to methods of fabricating a resistance variable memory element and a device formed therefrom having improved switching characteristics. According to an embodiment of the present invention a resistance variable material memory element is annealed to remove stoichiometric amounts of a component of the resistance variable material. According to another embodiment of the present invention a silver-germanium-selenide glass is annealed for a duration of about 10 minutes in the presence of oxygen to drive off selenium and increase the rigidity of the glass.
Claims59
A method of fabricating a resistance variable memory element, comprising the steps of:
- forming a layer of a resistance variable material;
- and
- subsequently increasing the rigidity of said resistance variable material.
A method of fabricating a resistance variable element, comprising the steps of:
- forming a layer of germanium-selenide glass;
- incorporating silver into said germanium-selenide glass layer to form a silver-germanium-selenide glass;
- and
- processing said silver-germanium-selenide glass to remove at least some selenium from said silver-germanium-selenide glass.
A method of forming a resistance variable memory element comprising the steps of:
- forming a first electrode;
- forming an insulating layer over said first electrode;
- etching an opening in said insulating layer to expose said first electrode;
- depositing a resistance variable material in said opening;
- adding a metal to said resistance variable material to form a metal containing resistance variable material;
- increasing the rigidity of said metal containing resistance variable material;
- and
- forming a second metal electrode in contact with said metal containing resistance variable material.
A resistance variable memory element comprising;
- a first electrode;
- an annealed silver-germanium-selenide glass in electrical communication with said first electrode;
- and
- a second electrode in electrical communication with said annealed silver-germanium-selenide glass.
A chalcogenide element comprising:
- an annealed silver doped germanium-selenide glass, wherein said glass has a germanium molar concentration number of greater than about 0.23.
A chalcogenide element comprising:
- an annealed silver doped germanium-selenide glass, wherein said glass has a mean coordination number of at least about 2.46.
A resistance variable element comprising:
- an annealed metal containing resistance variable material having an increased rigidity.
A resistance variable element comprising:
- an annealed metal containing resistance variable material having an increased rigidity;
- at least one access transistor and at least one capacitor for storing a data value which is associated with said access transistor, and
- at least one metal plug electrically connected to an active area of said transistor.
A computer having a memory, said memory comprising:
- an annealed metal containing resistance variable material having increased rigidity.
A resistance variable element comprising:
- an annealed resistance variable material having an increased rigidity.
Dependencies are inferred from the claim text.